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MA: Fachverband Magnetismus
MA 44: Magnetic Half-metals and Oxides I
MA 44.7: Talk
Wednesday, March 16, 2011, 18:30–18:45, HSZ 401
Resistive switching in nanocolumnar manganite thin films — •Christin Kalkert, Jon-Olaf Krisponeit, Vasily Moshnyaga, Bernd Damaschke, and Konrad Samwer — I. Phys. Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen
The phenomenon of resistive switching, observed in a number of perovskite materials, has the potential of creating new resistive random access memory devices. Here we report the resistive switching effect in the La0.7Sr0.3MnO3 (LSMO) manganite.
We prepared LSMO thin films by using the metalorganic aerosol deposition technique on sapphire substrates. On these substrates the manganite films show a columnar growth as determined by x-ray diffraction and TEM analysis. The films were characterized by electric and magnetic measurements and structured by means of electron beam lithography and argon etching. The structures consist of µm-sized LSMO-bridges with LSMO contact areas on both sides of the bridge. On these contact areas we deposited Cr/Au contact pads via a lift-off process. The obtained structures show a bipolar resistive switching effect, which we discuss in terms of a local structural transformation at the grain boundaries between the individual nanocolumns.
Financial support by DFG via SFB 602, TPA2 and the Leibniz Program is acknowledged.