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MA: Fachverband Magnetismus

MA 44: Magnetic Half-metals and Oxides I

MA 44.7: Vortrag

Mittwoch, 16. März 2011, 18:30–18:45, HSZ 401

Resistive switching in nanocolumnar manganite thin films — •Christin Kalkert, Jon-Olaf Krisponeit, Vasily Moshnyaga, Bernd Damaschke, and Konrad Samwer — I. Phys. Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

The phenomenon of resistive switching, observed in a number of perovskite materials, has the potential of creating new resistive random access memory devices. Here we report the resistive switching effect in the La_0.7Sr_0.3MnO₃ (LSMO) manganite.

We prepared LSMO thin films by using the metalorganic aerosol deposition technique on sapphire substrates. On these substrates the manganite films show a columnar growth as determined by x-ray diffraction and TEM analysis. The films were characterized by electric and magnetic measurements and structured by means of electron beam lithography and argon etching. The structures consist of µm-sized LSMO-bridges with LSMO contact areas on both sides of the bridge. On these contact areas we deposited Cr/Au contact pads via a lift-off process. The obtained structures show a bipolar resistive switching effect, which we discuss in terms of a local structural transformation at the grain boundaries between the individual nanocolumns.

Financial support by DFG via SFB 602, TPA2 and the Leibniz Program is acknowledged.