Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
MA: Fachverband Magnetismus
MA 46: Magnetic Thin Films II
MA 46.6: Vortrag
Mittwoch, 16. März 2011, 18:15–18:30, CHE 184
Anisotropic interface magnetoresistance in Co/Pt — •André Kobs1, Simon Heße1, Wolfgang Kreuzpaintner2, Gerrit Winkler1, Dieter Lott2, Andreas Schreyer2, and Hans Peter Oepen1 — 1Institut für Angewandte Physik, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany — 2Helmholtz-Zentrum Geesthacht, Zentrum für Material- und Küstenforschung GmbH Max-Planck-Straße 1, 21502 Geesthacht, Germany
We report on a magnetoresistance (MR) effect which was detected in sputter-deposited and electron-beam evaporated Co/Pt films in the temperature range from 4.2 to 300 K. In contradiction to the anisotropic MR (AMR) in bulk materials, different values of the resistivity for magnetization in-plane (ρt: transverse resistivity) and perpendicular to the film plane (ρp: polar resistivity) - while perpendicular to the current - are found with ρp>ρt. To investigate the physical origin of the magnetoresistance anisotropy we systematically varied the Co layer thickness of sputter-deposited Pt/Co/Pt sandwiches from 0.8 to 50 nm. The results reveal an enhancement of the absolute diffusive scattering probability at the interface of 4% when the magnetization is rotated from the transverse to the polar geometry. In the thin film regime this anisotropic interface magnetoresistance (AIMR) is as large as the AMR. This result has a drastic implication on the interpretation of measurements of the intrinsic domain wall resistance in Co/Pt. To confirm the transport investigation the structural properties of the films are determined by x-ray reflectivity and diffraction.