Dresden 2011 – scientific programme

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MA: Fachverband Magnetismus

MA 47: Spintronics I/ Spin-dependent Transport/ Spin Torque - Invited Talk

MA 47.1: Invited Talk

Thursday, March 17, 2011, 10:15–10:45, HSZ 04

Perpendicular 40 nm MgO-CoFeB Magnetic Tunnel Junction — •Hideo Ohno — Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan — Res. Inst. Elec. Commun., Tohoku University, Sendai, Japan

Magnetic tunnel junction (MTJ), a spintronic device, can lead not only to fast, non-volatile, high density stand-alone/embedded RAMs but also to a possibility of constructing compact, nonvolatile, low-power CMOS VLSI processors employing logic-in-memory architecture [1]. To this end, an MTJ has to meet the following conditions at the same time: (1) thermal stability factor E/kBT greater than 40 at a reduced footprint, (2) resistance area product below 20 Ohm micrometer2 to allow current-induced switching, (3) intrinsic switching current IC0 of F micro A or below in a device having a feature size of F nm, (4) high tunnel magnetoresistance over 100%, and (5) BEOL compatibility capable of going through 350 oC annealing required for standard semiconductor processing without losing its high TMR ratio. Utilizing the perpendicular interface anisotropy at MgO-CoFeB, we show that these five conditions can nearly be met in a device having a 40 nm diameter [2]. I conclude my talk with prospects along with the remaining challenges.

[1] S. Ikeda, et al., IEEE Trans. ED, 54, 991, 2007. [2] S. Ikeda, et al., Nature Materials, 9, 721, 2010.

Work carried out at CSIS of Tohoku University (http://www.csis.tohoku.ac.jp) and supported by the FIRST program from JSPS.