Dresden 2011 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 51: Magnetic Half-metals and Oxides II

MA 51.5: Vortrag

Donnerstag, 17. März 2011, 12:00–12:15, HSZ 401

Magnetoresistrance and anomalous Hall Effect measurements of Co₂MnGe and Cu₂MnAl Heusler alloy thin film microstructures — •Mohamed Obaida^1,2, Denise Erb¹, Kurt Westerholt¹, and Hartmut Zabel¹ — ¹Institut für Experimentalphysik/Festkörperphysik, Ruhr-Universität Bochum, 44797 Bochum. — ²National Research Center (NRC), Tahrir Street - Dokki., 12311 Cairo., Egypt.

We study the magnetoresistance and Hall Effect of thin films of the ferromagnetic Heusler compounds Co₂MnGe and Cu₂MnAl prepared by UHV magnetron sputtering at room temperature. In the as-prepared state the Heusler alloy films are non-ferromagnetic (Cu₂MnAl) or weakly ferromagnetic (Co₂MnGe)[1] and the resistivity shows a negative temperature coefficient, indicative of strong disorder renormalization of the electronic density of states. The magnetoresistance and the anomalous Hall coefficient in the as-prepared state are small. The magnetoresistance strongly increases when the ferromagnetism gradually develops after step by step thermal annealing at high temperatures and decreases again when the magnetic moment approaches its saturation value.

[1] D. Erb et al. J. Phys. D: Appl. Phys. 43 (2010).