Dresden 2011 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 58: Spintronics II (jointly with TT, HL)

MA 58.5: Vortrag

Donnerstag, 17. März 2011, 18:15–18:30, HSZ 401

Unveiling the valence band nature of GaMnAs anisotropic carriers by inter-band tunneling spectroscopy — •Romain Giraud, Mara Granada, Edgar Briones, Ulf Gennser, Aristide Lemaitre, and Giancarlo Faini — CNRS/LPN, Route de Nozay, 91460 Marcoussis, France

The discovery of highly anisotropic properties of magnetic tunnel junctions based on GaMnAs [1] has led to new concepts for spintronics devices, such as magnetic memories based on anisotropy relaxation in nanostructures [2], or magnetic switches relying on electrical control of the magnetic anisotropy [3]. However, despite the success of mean-field theories of hole-induced ferromagnetism, a direct evidence of the existence of Bloch states is still missing, and the nature of carriers remains controversial (impurity-band vs. valence-band models).

Here, based on inter-band tunneling spectroscopy of p-GaMnAs/n-GaAs Zener-Esaki diodes [4], we directly evidence the valence band nature of GaMnAs carriers and, importantly, reveal the spin-split valence bands dependence of their cubic and uniaxial anisotropies (which can be tuned under applied bias or magnetic field). In particular, the Fermi energy is found well below the top of the valence band, and the energy dependence of Bloch states anisotropies shows some specific features predicted by a k.p modelling of the spin-split valence bands.

[1] C. Gould et al., Phys. Rev. Lett. 93, 117203 (2004) [2] K. Pappert et al., Nat Phys. 3, 573 (2007) [3] C. Bihler et al., Phys. Rev. B 78, 045203 (2008) [4] R. Giraud et al., Appl. Phys. Lett. 87, 242505 (2005)