Dresden 2011 – scientific programme
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MA: Fachverband Magnetismus
MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)
MA 63.21: Poster
Friday, March 18, 2011, 11:00–14:00, P2
Ab initio treatment of spin relaxation in Graphene caused by adatoms — Martin Gradhand1, •Dmitry Fedorov2, Sergey Ostanin1, Igor Maznichenko2, Arthur Ernst1, Peter Zahn2, Ingrid Mertig1,2, and Jaroslav Fabian3 — 1Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany — 2Martin-Luther-Universität Halle, Institut für Physik, 06099 Halle, Germany — 3Institut für Theoretische Physik, Universität Regensburg, 93040 Regensburg, Germany
The fast spin relaxation of conduction electrons in Graphene [1,2] is still an intriguing problem, since different experimental and theoretical investigations favour either the Elliott-Yafet or the Dyakonov-Perel spin relaxation mechanism. Nevertheless, it started to be a common opinion that the spin relaxation times obtained in experiments are due to the scattering of conduction electrons on adatoms which increase an effective spin-orbit interaction. However, in the theory the magnitude of the spin relaxation time is usually estimated using models where only a few parameters are taken from first principles calculations.
Here we present results of a consistent ab initio calculation of the spin relaxation time due to the Elliott-Yafet mechanism induced by adatoms. Our study is based on a recently developed fully relativistic approach for the spin-flip scattering at impurities [3]. We consider C and Si atoms as possible adatoms in the experiments.
[1] N. Tombros et al., Nature 448, 571 (2007) [2] N. Tombros et al., Phys. Rev. Lett. 101, 046601 (2008) [3] M. Gradhand et al., Phys. Rev. B 81, 020403(R) (2010)