Dresden 2011 – scientific programme
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MA: Fachverband Magnetismus
MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)
MA 63.32: Poster
Friday, March 18, 2011, 11:00–14:00, P2
Magnetic properties of Mn2.6Ga thin films with perpendicular anisotropy — •Daniel Ebke, Manuel Glas, Patrick Thomas, and Günter Reiss — Thin Films and Physics of Nanostructures, Physics Department, Bielefeld University, Germany
Spintronic devices have found a lot of attraction in the recent years due to possible new applications. To reach high storage densities and low spin transfer writing current densities it is essential to utilize magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. Materials with a high spin polarization like Heusler compounds are eligible to realize high tunneling magnetoresistance (TMR) ratios. The Heusler compound Mn3−xGa is predicted to show a high spin polarization and a perpendicular magnetic anisotropie. In this work we have investigated the magnetic properties of Heusler Mn2.6Ga thin films. The results will be discussed with respect to the choice of substrate, deposition temperature and film thickness.