Dresden 2011 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

MA: Fachverband Magnetismus

MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)

MA 63.33: Poster

Friday, March 18, 2011, 11:00–14:00, P2

Preparation of Mn_3−xGa Heusler thin films with perpendicular magnetic anisotropy — •Manuel Glas, Daniel Ebke, Patrick Thomas, and Günter Reiss — Thin Films and Physics of Nanostructures, Physics Department, Bielefeld University, Germany

Recently, the integration of materials with perpendicular magnetic anisotropy into magnetic tunnel junctions (MTJs) has found a lot of attraction due to the predicted lowered current densities for spin transfer switching and a higher thermal stability. Because of the predicted high spin polarization and the low magnetic moment Mn₃Ga is a promising material for future spin torque transfer (STT) magnetic switching devices. For this work, we have fabricated Mn_3−xGa Heusler thin films with varying stoichiometries into half magnetic tunnel junctions. The effect of Heusler film composition will be discussed with respect to the magnetic and crystal properties.