Dresden 2011 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)
MA 63.46: Poster
Freitag, 18. März 2011, 11:00–14:00, P2
Magnetic coupling in Fe/(Ga,Mn)As based heterostructures — •M. Sperl1, P. Torelli2, M. Soda1, F. Eigenmann1, M. Utz1, S. Polesya3, G. Woltersdorf1, G. Panaccione2, D. Bougeard1, and C. H. Back1 — 1Institut für Experimentelle Physik, Universität Regensburg, D-93040 Regensburg, Germany — 2Laboratorio Nazionale TASC, INFM-CNR, in Area Science Park, S.S. 14, Km 163.5, I-34012 Trieste, Italy — 3Department of Chemistry, Ludwig-Maximilians University Munich, Germany
(Ga,Mn)As is one of the most promising diluted magnetic semiconductors (DMS) for spintronics due to the compatibility with the GaAs MBE technology. Despite the promising features (Ga,Mn)As has a Curie temperature well below room temperature limiting its possible applications. One potential direction to tailor novel properties of DMS thus making integration in real devices feasible is to exploit interface effects in highly controlled heterostructures (HS). Following this route FM behaviour of Mn at room temperature in both epitaxial and non-epitaxial Fe/(Ga,Mn)As interfaces has been demonstrated [1].
We report results obtained with Synchrotron Radiation techniques, where we were able to monitor the evolution of the magnetic coupling between Fe and Mn as a function of Mn doping, temperature and thickness. In particular, XMCD experiments show a peculiar thickness dependence of the room temperature magnetic coupling between Fe and Mn, namely a switching from antiparallel to parallel, thus opening the possibility of controlling the magnetization state of the interface.
[1] F. Maccherozzi et al. Phys. Rev. Lett. 101 (2008) 267201.