Dresden 2011 – scientific programme

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MA: Fachverband Magnetismus

MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)

MA 63.51: Poster

Friday, March 18, 2011, 11:00–14:00, P2

Optical and magnetic properties of Cr-implanted indium oxides thin films — •Scarlat Camelia, Shengqiang Zhou, Mykola Vinnichenko, Andreas Kolitsch, Manfred Helm, and Heidemarie Schmidt — Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany

Dilute magnetic oxides using the electron spin rather than its charge as information carrier are expected to play a key role in the development of spinelectronics. As it has been shown recently, indium oxide (IO), a transparent conducting material, is of potential importance also as a material for spintronics [1]. Polycrystalline and amorphous (ca. 300 nm thick) n-type conductive IO films were grown on SiO₂/Si substrates using reactive magnetron sputtering. The films were implanted with 120 keV Cr⁺ ions in order to reach Cr concentrations of 1, 2, 3, 4 and 5 at%. Cr is chosen as a dopant because of its large magnetic moment in the ionic state, and the antiferomagnetic nature of Cr metal segregations. Highly oxygen deficient 2%Cr:IO co-evaporated films revealed ferromagnetism. Here we study the effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties of Cr-implanted IO films. It is shown that only the 2%Cr:IO implanted film is weakly ferromagnetic at 5 K. A reasonable model for the Cr:IO implanted films has been developed to extract optical constants from spectroscopic ellipsometry data below 3 eV in dependence on the Cr concentration. [1] C. Scarlat et al., Nuclear Instruments and Methods in Physics Research B 267 (2009) 1616.