Parts | Days | Selection | Search | Updates | Downloads | Help
MA: Fachverband Magnetismus
MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)
MA 63.54: Poster
Friday, March 18, 2011, 11:00–14:00, P2
Structural and magnetic properties of Zn1−xFexO4 thin films grown by pulsed laser deposition — •Kerstin Brachwitz1, Katja Mexner1, Tammo Böntgen1, Michael Lorenz1, Jörg Lenzner1, Kartik C. Ghosh2, and Grundmann Marius1 — 1Institut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany — 2Physics, Astronomy, and Materials Science Department, Missouri State University, Springfield, 901 South National Avenue, MO 65804, USA
Zinc ferrite (ZnFe2O4) is a semitransparent magnetic semiconductor with various potential applications, e.g. in magnetic tunnel junctions and spin filters. Using pulsed laser deposition Zn1−xFexO4 thin films with target compositions 0≤ x ≤0.66 were grown on a-plane sapphire substrates. Besides the target stoichiometry the oxygen partial pressure p(O2) applied during growth was varied. By increasing x the intensity of the ZnO (0001) reflex decreases while that of ZnFe2O4 (111) increases. For x>0.4 single phase ZnFe2O4 layers are obtained. For these thin films energy dispersive X-ray spectroscopy shows an excess of iron for p(O2)=5· 10−5 mbar and a strong influence of p(O2) on the thin film stoichiometry.
Further, the magnetic properties depend on p(O2) and x. The saturation magnetization ranges up to 30 emu/cm3 for x=0.66. Indications for an in-plane magnetization were found by magnetic force microscopy and magnetization measurements. The latter revealed that the coercive field increases with increasing Fe content.