Dresden 2011 – scientific programme

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MA: Fachverband Magnetismus

MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)

MA 63.68: Poster

Friday, March 18, 2011, 11:00–14:00, P2

E-beam patterning of CoFeB/MgO/CoFeB-based magnetic tunneljunctions — •Johannes Christian Leutenantsmeyer¹, Marvin Walter¹, Vladyslav Zbarsky¹, Henning Schuhmann², Michael Seibt², and Markus Münzenberg¹ — ¹I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen — ²IV. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen

The tunnel magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) is suitable for various applications such as next generation RAM-Cells, the MRAM. Our MTJs are fabricated by magnetron sputtered CoFeB and Ta and further e-beam evaporated material such as the MgO-barrier. After patterning, the samples are characterized by R(H) measurements and optical hysteresis loop measurements. The samples show up to 200% TMR.
Since spin-transfer torque requires smaller dimensions we investigate downscaling of the junction size. We expect this to improve the switching behavior and increase the TMR-ratio of our MTJs. Thus we present a study of e-beam lithography, which gives us the capability to produce MTJs below 1 µ m edge length. We also aquire the ability to produce different shaped structures, with the aim to investigate the MTJs’ structural anisotropy to optimize magnetic switching.
Research is supported by the DFG through SFB 602.