Dresden 2011 – scientific programme

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MA: Fachverband Magnetismus

MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)

MA 63.69: Poster

Friday, March 18, 2011, 11:00–14:00, P2

Influence of the buffer-layer on the tunnel barrier quality in CoFeB/MgO/CoFeB magnetic tunnel junctions on the tunnel magneto resistance (TMR). — •Vladyslav Zbarsky¹, Marvin Walter¹, Gerrit Eilers¹, Johannes Christian Leutenantsmeyer¹, Patrick Peretzki², Michael Seibt², and Markus Münzenberg¹ — ¹I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen — ²IV. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen

The optimization of MTJs is necessary for increasing of TMR and therefore is very important for the production of MRAM devices. The quality of the tunnel barrier of our CoFeB/MgO/CoFeB MTJs is essential for getting high TMR. For this reason we investigate the influence of roughness of the MgO layer on the TMR. Another important parameter which we could optimize is the choice and preparation of the buffer-layer. For example we compared two sorts of Ta buffer-layers: prepared via magnetron sputtering and via e-beam evaporation. Already by optimizing these two parameters we increase the TMR from 80% to above 200%. In addition we show the investigations of the influence of the annealing temperatures and annealing duration on the TMR. Fast annealing time prevents diffusion, however for short annealing time no full crystallization is observed.
We thank the DFG for funding the research through SFB 602.