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MA: Fachverband Magnetismus

MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)

MA 63.76: Poster

Freitag, 18. März 2011, 11:00–14:00, P2

Effect of film roughness in Fe/MgO/Fe magnetic tunnel junctions: model calculations — •Saeideh Edalati Boostan¹, Hosein Moradi², and Christian Heiliger¹ — ¹I. Physikalisches Institut, Justus Liebig University Giessen, D-35392, Germany — ²Department of Physics,Faculty of sciences, Ferdowsi University of Mashhad, Mashhad, Iran

We calculate how interface roughness affects the tunneling magnetoresistance (TMR) in Fe/MgO/Fe (100) junctions. The used method is based on a single-band tight-binding (SBTB) approximation [1] employing the Green’s function formalism. We investigate the influence of disorder at the TMR ratio. Thereby, the disorder is modeled by considering different occupation probabilities of Fe and MgO at interface sites. We calculate the current densities for parallel and anti-parallel configurations for different disorders. The results show that the roughness decreases the TMR that match well with experimental observations.
H. Itoh, J. Phys. D: Appl. Phys. 40 1228.1233 (2007).