Dresden 2011 – scientific programme

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MA: Fachverband Magnetismus

MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)

MA 63.82: Poster

Friday, March 18, 2011, 11:00–14:00, P2

Preparation and Characterization of Magnetic Tunnel Junctions with Spin Transfer Torque — •Marcel Höwler¹, Kerstin Bernert¹, Jeffrey McCord¹, Kay Potzger¹, Monika Fritzsche¹, Arndt Mücklich¹, Jürgen Fassbender¹, Konstantin Kirsch², Roland Mattheis², and Stefan Slesazeck³ — ¹Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, 01314 Dresden, Germany — ²Institut für Photonische Technologien e.V. (IPHT), Postfach 10 02 39, 07702 Jena, Germany — ³NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden, Germany

Current-perpendicular-to-plane (CPP) magnetic tunnel junctions (MgO-MTJ) have been prepared using electron beam lithography as well as argon ion beam etching. A tantalum hardmask was utilized for pattern transfer. The size of the elliptical nanopillars could be decreased down to 90nm x 150 nm while preserving a TMR ratio of 92.5 %. TEM images proof the absence of redepositions at the MgO layer edge and give an insight into the interface quality.

Magnetization switching was performed using either static magnetic fields and/or dc current (spin torque). The nanopillars could be characterized at temperatures ranging from 5 K to 150 K and room temperature. The analysis of magnetization dynamics included single-shot time-resolved magnetoresistance measurements as well as dc current induced oscillations of the free-layer magnetization.