Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

MA: Fachverband Magnetismus

MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)

MA 63.98: Poster

Freitag, 18. März 2011, 11:00–14:00, P2

The Heusler compound Co₂FeAl_0.4Si_0.6 on its way to industry — •Frederick Casper¹, Tanja Graf¹, Gerhard Jakob², and Claudia Felser¹ — ¹Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg - University, 55099 Mainz — ²Institute of Physics, Johannes Gutenberg - University, 55099 Mainz

Half-metallic compounds Co-based Heusler compounds have been predicted to have a high spin polarization even at room temperature due to their high Curie temperature of around 1000 K. Recently, many different Heusler compounds were studied as potential candidates for TMR- and GMR-devices. High TMR-ratios of up to 220% at room temperature could be reached. On the other hand these experiments were performed on small MgO-substrates which are not suitable for an industrial application. We implemented the Heusler compound into an industrial production. A twelve inch target is used to sputter thin films of Co₂FeAl_0.4Si_0.6 (CFAS) on a five inch silicon wafer. Since the electronic structure of CFAS is very sensitive to its atomic order, the influence of the substrate, the buffer layer, and the annealing temperature on the structure and the magnetic properties of the films were studied by X-ray diffraction, VSM measurements and TEM measurments, respectively. Diffetrent TMR-stags with a MgO barrier were deposited and show a TMR ratio up to 30 % at room temperature. This work is supported by the Federal Ministry for Education and Research BMBF, project "Multimag".