MI 3: TEM- and SEM-based Material Analysis
Montag, 14. März 2011, 14:30–16:45, BEY 81
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14:30 |
MI 3.1 |
Hauptvortrag:
Transmission electron microscopy of interface and defect phenomena of functional materials — •Wolfgang Jäger
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15:15 |
MI 3.2 |
Hauptvortrag:
The contrast mechanisms of LL-BSE electrons in FE-SEM - Characterization of polymer, single proteins, and oxidization states of elements — •Heiner Jaksch
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16:00 |
MI 3.3 |
TEM study on light induced crystallization of amorphous silicon — •Martin Schade, Teimuraz Mchedlidze, Martin Kittler, and Hartmut S. Leipner
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16:15 |
MI 3.4 |
Enhancing electron diffraction through precession — •Giuseppe Pavia, Loic Patout, Gerd Benner, and Harald Niebel
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16:30 |
MI 3.5 |
Indentation-induced dislocations and cracks in GaN bulk crystals — •Ingmar Ratschinski, Hartmut S. Leipner, Frank Heyroth, Wolfgang Fränzel, and Frank Habel
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