Dresden 2011 – scientific programme
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MM: Fachverband Metall- und Materialphysik
MM 26: Topical Session TEM VII
MM 26.2: Talk
Wednesday, March 16, 2011, 15:00–15:15, IFW B
Strain mapping of strained transistors by dark-field off-axis electron holography — •Jan Sickmann1, Hannes Lichte1, Holm Geisler2, and Hans-Jürgen Engelmann2 — 1Triebenberg Laboratory, Institute for Structure Physics, TU Dresden, 01062 Dresden, Germany — 2Globalfoundries Dresden, Center for Complex Analysis, 01109 Dresden, Germany
Dark-field off-axis electron holography in a TEM has been proven to measure the two-dimensional strain distribution in semiconductor devices at nanometer scale resolution [1]. The technique is based on the interference of diffracted waves from adjacent sample areas using the dark-field off-axis holography configuration [2]. The phases of the diffracted waves then give direct access to local changes in the lattice parameter [1]. We present recent results of strain measurements on state-of-the-art transistor structures manufactured by Globalfoundries Dresden. Applying specific holographic setups at an aberration corrected Tecnai F20 TEM lead to significant improvements in lateral resolution and signal resolution of the two dimensional strain maps. Since the variations of the lattice strain relative to the original lattice parameter are often expected to be less than 1%, possibilities for optmizing the signal properties are discussed. [1] M. J. Hÿtch, F. Houdellier, F. Hüe, and E. Snoeck, Nature London 453, 1086 (2008). [2] K.-J. Hanszen, J. Phys. D: Appl. Phys 19, 373 (1986).