Dresden 2011 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 31: Postersitzung II
MM 31.18: Poster
Mittwoch, 16. März 2011, 17:15–18:45, P5
Exploring the interface structure of TaN/Gd2O5/HfO2 gate stacks — •Catharina G. Wille, Dongkyu Cha, J. Alfonso Caraveo, Husam N. Alshareef, and Tala’at Al-Kassab — King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
The recent introduction of high dielectric constant (high-k) oxides such as HfO2 as replacement materials for the SiO2 gate dielectric has accelerated research activity in high-k materials for transistor-based devices.
In this study, a Gd2O5/HfO2 stacked gate dielectric was used to fabricate TaN/ Gd2O5/HfO2 /SiO2/Si thin films and MOS capacitors. The effects of annealing condition on the structure and morphological properties of the proposed films were investigated via transmission electron microscopy (TEM). As shown in earlier works, DFT calculations in conjunction with the electrical and physical characterization of the gate stacks demonstrated the importance of controlling the distribution of both oxygen and nitrogen atoms directly at the TiN/HfO2 interface.
With the addition of the Gd2O5 -layer, the oxygen concentration depth profile was derived both by means of electron energy loss spectroscopy (EELS) and atom probe tomography (APT). Structural investigation by means of high resolution transmission electron microscopy (HR-TEM) concluded the detailed study of the metal/dielectric interface.