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MM: Fachverband Metall- und Materialphysik

MM 31: Postersitzung II

MM 31.36: Poster

Mittwoch, 16. März 2011, 17:15–18:45, P5

Nano-morphology of optoelectronic circuits exploiting focused ion beam lithography — Selcuk Zorlu¹, •Hideyuki Maki^1,2, and Alexander Holleitner¹ — ¹Walter Schottky Institut and Physik-Department, TUM Garching, Germany — ²Department of Applied Physics and Physico-Informatics, Keio University, Hiyoshi, Yokohama, Japan

We present studies on the nano-morphology of optoelectronic circuits by exploiting a focused ion beam (FIB) lithography in combination with an electron beam microscope. To this end, lamellas of optoelectronic circuits are fabricated in a cross-beam (FIB and e-beam) microscope. The lamellas are side-cuts of the circuits, and they give access to the vertical structure of the semiconducting, metal, or organic layers. The presented method allows analyzing interpenetrating networks of vertical, optoelectronic two-terminal circuits.