Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
MM: Fachverband Metall- und Materialphysik
MM 39: Computational Materials Modelling V
MM 39.6: Vortrag
Donnerstag, 17. März 2011, 17:30–17:45, IFW A
Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications — •Daijiro Nozaki1, Jens Kunstmann1, Felix Zoergiebel1, and Gianaurelio Cuniberti1,2 — 1Institute for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, 01062, Dresden, Germany — 2Division of IT Convergence Engineering and National Center for Nanomaterials Technology, POSTECH, Pohang, Republic of Korea
We developed a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanism of the transport process. Our multiscale model combines two approaches on different lengthscales: (1) the finite element method to calculate the electrostatic potential across the Schottky-contact and (2) the Landauer approach combined with the method of non-equilibrium Green's functions to calculate the electron transmission through the device. Our model correctly reproduces typical I-V characteristics of FETs and we obtained current saturations and high on/off ratios that are in good agreement with the experiment.