Dresden 2011 – scientific programme

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MM: Fachverband Metall- und Materialphysik

MM 9: Topical Session TEM III

MM 9.5: Talk

Monday, March 14, 2011, 17:15–17:30, IFW A

Quantitative evaluation of Avrami-type crystallization in a thin GeSi film using double wedge geometry — •Florian Niekiel and Erdmann Spiecker — CENEM, Universität Erlangen-Nürnberg, Erlangen, Germany

A key to understanding and controlling thin film growth processes and properties is the knowledge of the variation in structure with distance from the substrate. Transmission electron microscopy (TEM) is known as a powerful tool for characterization of thin films structures. By combining plan-view and cross-section analysis a qualitative view of the three-dimensional (3D) film structure can be obtained. However, neither of the two geometries is compatible with the need for quantitative characterization of the structural, crystallographic or compositional parameters that define the thin film. We have recently developed a new double wedge sample preparation technique that enables plan-view TEM investigation of large areas at each depth in the film. Based on a quantitative evaluation of image series statistically relevant data on the 3D film structure can be obtained. Here, we demonstrate the technique for a GeSi film that first started to grow in the amorphous state, then formed crystalline nuclei that expanded with increasing distance from the substrate finally replacing all amorphous material in the top part of the film. Quantitative evaluation of extensive image series obtained in double wedge geometry allowed us to determine the relative fraction of crystalline material as a function of distance from the substrate.