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O: Fachverband Oberflächenphysik
O 15: Nanostructures at surfaces: Dots, particles, clusters, arrays I
O 15.5: Vortrag
Montag, 14. März 2011, 16:00–16:15, WIL C107
Growth of grooved Si and Ge/Si surfaces by selective adsorption of C60 — •Stefan Korte, Vasily Cherepanov, and Bert Voigtländer — Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, 52425 Jülich, Germany, and JARA-Fundamentals of Future Information Technology
Ge/Si nanostructures can be grown using Bi as surfactant in order to suppress Si-Ge intermixing and to faciliate layer-by-layer growth. With an appropriate choice of growth conditions one can achieve a chemical selectivity for C60 adsorption on Bi terminated Si and Ge/Si surfaces. C60 molecules then adsorb only on the step edges of a Si(111) surface or onto the Ge area of Ge/Si heterostructures, respectively. During subsequent growth of Si and Ge C60 can be used to mask those parts of the surface and prevent growth of further Si and Ge layers. When Si or Ge is deposited onto the surface it grows layer-by-layer on the free Si terraces and not on the C60 covered areas.
This masking has been demonstrated for C60 covered Ge nanowires on Si and for C60 covered Si step edges. It enables us to grow Si and Ge thin films with parallel grooves by an appropriate sequence of MBE depositions. Surfaces with 3 nm deep and less than 10 nm wide trenches were fabricated.