Dresden 2011 – scientific programme
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O: Fachverband Oberflächenphysik
O 20: Solid / liquid interfaces II
O 20.5: Talk
Monday, March 14, 2011, 18:15–18:30, WIL B321
In situ Diffraction Studies of Homoepitaxial Growth of Cu(001) from Aqueous Electrolyte — •Frederik Golks1,2, Yvonne Gründer2, Jochim Stettner2, Klaus Krug2, Jörg Zegenhagen1, and Olaf M. Magnussen2 — 1European Synchrotron Radiation Facility, Grenoble, France — 2Universität Kiel, Institut für Experimentelle und Angewandte Physik, Kiel, Germany
Motivated by the pivotal role of copper electroplating in the production of interconnects for ULSI microelectronics, we have studied the homoepitaxial growth of Cu(001) in aqueous electrolytes containing 1 mM chloride and 1 or 5 mM Cu2+ by in-situ surface x-ray diffraction with high time resolution. Although diffusion-limited layer-by-layer growth is observed over a wide potential regime, a pronounced mutual interdependence of the interface structure and the growth behavior is found. Thus, the tendency towards surface roughening is increased in the presence of a complete c(2x2) Cl− adlayer [1] while the ordering of the Cl− adlayer is slowed down during Cu deposition. Furthermore, the presence of polyethylene glycol (PEG), a commonly used inhibitor in industry, results in significantly lower microscopic growth rates and an increased tendency towards 3D growth.
[1] Y. Gründer, D. Kaminski, F. Golks, K. Krug, J. Stettner, O. M. Magnussen, A. Franke, J. Stremme, E. Pehlke, Phys. Rev. B 81, 17 (2010)