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O: Fachverband Oberflächenphysik
O 21: Clean surfaces: Metals, semiconductors, oxides and insulators II
O 21.4: Vortrag
Montag, 14. März 2011, 18:00–18:15, WIL B122
Photoemission induced gating of topological insulator — •A. A. Kordyuk1,2, T. K. Kim1, V. B. Zabolotnyy1, D. V. Evtushinsky1, M. Bauch1, C. Hess1, B. Büchner1, H. Berger3, and S. V. Borisenko1 — 1Institute for Solid State Research, IFW-Dresden, P.O.Box 270116, D-01171 Dresden, Germany — 2Institute of Metal Physics of National Academy of Sciences of Ukraine, 03142 Kyiv, Ukraine — 3Institute of Physics of Complex Matter, EPFL, 1015 Lausanne, Switzerland
The recently discovered topological insulators exhibit topologically protected metallic surface states which are interesting from the fundamental point of view and could be useful for various applications if an appropriate electronic gating can be realized. Our photoemission study of Cu intercalated Bi2Se3 shows that the surface states occupancy in this material can be tuned by changing the photon energy and understood as a photoemission induced gating effect. Our finding provides an effective tool to investigate the new physics coming from the topological surface states and suggests the intercalation as a recipe for synthesis of the material suitable for electronic applications.