Dresden 2011 – scientific programme
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O: Fachverband Oberflächenphysik
O 29: Graphene I
O 29.4: Talk
Tuesday, March 15, 2011, 12:00–12:15, WIL B321
Long-Range Ordered Single Crystal Graphene on Heteroepitaxial Ni Thin Films Grown on MgO(111) — •Takayuki Iwasaki1, Hye Jin Park1, Mitsuharu Konuma1, Dong Su Lee1, Alexei Zakharov2, Jurgen H. Smet1, and Ulrich Starke1 — 1Max-Planck-Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany — 2Max Lab, Lund University, Box 118, Lund, S-22100, Sweden
The establishment of graphene-based electronics can be achieved when the size, crystal orientation and number of layers of graphene are controlled on a substrate. Growth of large area graphene has been reported on metal films [1] or foils [2]. The resulting graphene, however, is polycrystalline with rotational disorder and grain boundaries which can scatter carriers and thus impair the device properties. Here, we demonstrate the synthesis of large-size single crystal and uniform monolayer graphene on Ni(111) thin films that were heteroepitaxially grown on MgO substrates [3]. The Ni films have flat terraces and no large grain boundaries, and also the formation of twins is suppressed on the atomic scale. As confirmed by LEED and ARUPS measurements the Ni films as well as the synthesized graphene are single crystalline. The Ni films can be easily etched, so that the transfer of mm-scale single crystal graphene onto an insulating substrate could be achieved. Furthermore, we show the synthesis of twisted bilayer graphene by a combination of catalytic hydrocarbon reaction and carbon segregation. [1] K.S. Kim et al., Nature, 457, 706 (2009). [2] X. Li et al., Science, 324, 1312 (2009). [3] T. Iwasaki et al., Nano Lett., accepted for publication.