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O: Fachverband Oberflächenphysik

O 29: Graphene I

O 29.5: Vortrag

Dienstag, 15. März 2011, 12:15–12:30, WIL B321

Direct graphene growth on insulators: The interaction with the substrate — •Olaf Seifarth, Gunther Lippert, Jaroslaw Dabrowski, and Grzegorz Lupina — IHP, Im Technologiepark 25, 15230 Frankfurt, Germany

Strong effort is devoted to grow graphene directly on insulators to create a technological step towards cost effective mass production of high-frequency transistors. We have shown recently, that direct graphene growth can be achieved on silicate substrates by solid carbon source deposition. Here, we present a systematic study on the interaction of the graphene with the insulator by means of Raman and photoelectron spectroscopy. We address temperature dependence, the correlation between graphene quality and the number of layers and unintentional background doping. Special notice is devoted to the agglomeration sites on the substrate.