Dresden 2011 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
O: Fachverband Oberflächenphysik
O 36: Poster Session II (Metals; Nanostructures at surfaces; Surface or interface magnetism; Spin-Orbit Interaction at Surfaces; Electron and spin dynamics; Surface dynamics; Methods; Theory and computation of electronic structure)
O 36.78: Poster
Tuesday, March 15, 2011, 18:30–22:00, P4
Electron Beam Induced Surface Activation Lithography on Silicon Oxide, Silicon Nitride and Titanium Oxide — •Marie-Madeleine Walz, Florian Vollnhals, Florian Rietzler, Michael Schirmer, Hubertus Marbach, and Hans-Peter Steinrück — Lehrstuhl für Physikalische Chemie II and Interdisciplinary Center for Molecular Materials (ICMM), Friedrich-Alexander- University Erlangen-Nuremberg, Egerlandstr. 3, 91058 Erlangen
Recently, we were able to demonstrate that a focused electron beam can be used to locally activate SiOx to allow for a new kind of nanoscale lithography. In contrast to the established direct write technique electron beam induced deposition (EBID), where a precursor gas adsorbs on a substrate and is decomposed locally by a focused electron beam, in electron beam induced surface activation (EBISA) the e-beam is used to locally activate the surface. In a second step a precursor gas is introduced and may decompose at the activated areas. In combination with a precursor that exhibits autocatalytic growth effects, like Fe(CO)5, this can be used to fabricate nanostructures on surfaces [1].
In the present work we expand the EBISA concept to other substrates, i.e, ultrathin Si3N4 membranes and a TiO2 single crystal. The basic principle of EBISA and the corresponding experimental results will be presented and discussed.
This work was supported by the DFG through grant MA 4246/1-1.
[1] M.-M. Walz et al., Angew. Chem. Int. Ed. 49 (2010), 4669