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O: Fachverband Oberflächenphysik
O 42: Graphene II
O 42.3: Vortrag
Mittwoch, 16. März 2011, 11:45–12:00, WIL B321
Mechanically-induced transport switching effect in graphene-based nanojunctions — Takazumi Kawai1, Markus Poetschke2, •Claudia Gomes da Rocha2, Yoshiyuki Miyamoto1, Stephan Roche3, and Gianaurelio Cuniberti2 — 1Green Innovation Research. Laboratoriess, NEC Corp., 34 Miyukigaoka, Tsukuba, Ibaraki, Japan — 2Institute for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, 01062 Dresden, Germany — 3Centre d' Investigacio en Nanociencia i Nanotecnologia (ICN-CSIC), UAB Campus, E-08193 Bellaterra, Spain
We present a theoretical study suggesting a novel type of electronic switching effect, driven by the geometrical reconstruction of nanoscale graphene-based junctions. We considered junction structures which have alternative metastable configurations transformed by rotations of local carbon dimers. The use of external mechanical strain allows a control of the energy barrier heights of the potential profiles and also changes the reaction character from endothermic to exothermic or vice-versa. The reshaping of the atomic details of the junction encode binary electronic ON or OFF states, with ON/OFF transmission ratio that can reach up to 100000. Our results suggest the possibility to design modern logical switching devices or mechanophore sensors, monitored by mechanical strain and structural rearrangements.