Dresden 2011 – scientific programme

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O: Fachverband Oberflächenphysik

O 51: Graphene III

O 51.3: Talk

Wednesday, March 16, 2011, 15:30–15:45, WIL B321

Raman spectroscopy on graphene on insulator surfaces — •Hanna Bukowska, Florian Meinerzhagen, Sevilay Akcöltekin, Markus Neubert, Volker Buck, and Marika Schleberger — Universität Duisburg-Essen, Fakultät für Physik, Lotharstraße 1, 47058 Duisburg, Germany

Raman spectroscopy is a powerful nondestructive method to investigate graphene sheets. We prepare graphene on different substrates: SiO₂ as well as the insulators SrTiO₃, TiO₂, and Al₂O₃. We measure the Raman spectra of all those samples for single-, bi-, fewlayer graphene and graphite. The 2D peak of the Raman spectrum evolves clearly with the number of layers. It reflects the changes in the electronic structures and any substrate-induced changes. The D peak is solely activated by presence of morphological defects - here we verify the quality of our graphene. We compare virgin and modificated graphene which was irradiated with swift heavy ions. Finally, in the future we want to study graphene transistors prepared on two of the above mentioned substrates, where any difference in charge carrier doping should show up in a change of the G peak.