Dresden 2011 – scientific programme
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O: Fachverband Oberflächenphysik
O 51: Graphene III
O 51.7: Talk
Wednesday, March 16, 2011, 16:30–16:45, WIL B321
Phonon-Plasmon Dispersion of Graphene and Quasi-Freestanding Graphene on 6H-SiC(0001) — •Michael Endlich1, Roland J. Koch1,2, Thomas Haensel1, Thomas Seyller2, and Juergen A. Schaefer1,3 — 1Institut für Physik and Institut für Mikro- und Nanotechnologien, TU Ilmenau, PF 100565, 98684 Ilmenau, Germany — 2Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Germany — 3Department of Physics, Montana State University, P.O. Box 173840, Bozeman, MT 59717-3840, USA
We report on a comparison between the strongly coupled phonon-plasmon modes of graphene and hydrogen-intercalated monolayer graphene epitaxially grown on 6H-SiC(0001). The dispersion of these modes have been simulated within a simple dielectric model. As a result, the quasi-freestanding character of the hydrogen-intercalated graphene has been corroborated. From the model it is possible to derive essential values of the graphene such as charge carrier density, effective mass and mobility, which are important for technological applications like high frequency transistors. Furthermore, the existence of silicon-hydrogen and carbon-hydrogen stretching and bending vibrations indicate not only a saturation of Si-dangling bonds at the interface, as it has been previously reported in the literature.