Dresden 2011 – scientific programme
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O: Fachverband Oberflächenphysik
O 56: [DS] Progress in Micro- and Nanopatterning: Techniques and Applications III (Focused Session, jointly with O - Organisers: Graaf, Hartmann)
O 56.1: Talk
Wednesday, March 16, 2011, 15:00–15:15, GER 38
Femtosecond laser induced recrystallization and ablation of hydrogenated amorphous silicon films — •Babak Soleymanzadeh1, Christian Strüber1, Helmut Stiebig1,2, and Walter Pfeiffer1 — 1Universität Bielefeld, Universitätsstr. 25, 33615 Bielefeld, Germany — 2Malibu GmbH & Co. KG, Böttcher Str. 7, 33609 Bielefeld, Germany
Ultrashort laser pulses offer new and fascinating possibilities in the field of laser material processing. Here we investigate the femtosecond laser induced recrystallization and ablation of hydrogenated amorphous silicon films (300 nm thickness) grown on glass substrates by large area (>1 m2) plasma-enhanced chemical-vapor deposition. At laser fluences of <40 mJcm−2 (800 nm, <100 fs pulse duration) recrystallization of the amorphous silicon layer is observed in spatially resolved Raman micro-spectroscopy. The fluence dependence of this recrystallization indicates that a nonlinear excitation mechanism is responsible. At slightly higher fluences the amorphous silicon thin-film is ablated. Scanning electron microscopy and energy-dispersive X-ray spectroscopy (EDX) is applied to investigate the ablation process for various laser fluences. The prospect of using femtosecond laser induced material processing in silicon thin-film photovoltaics is discussed.