Dresden 2011 – scientific programme
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O: Fachverband Oberflächenphysik
O 56: [DS] Progress in Micro- and Nanopatterning: Techniques and Applications III (Focused Session, jointly with O - Organisers: Graaf, Hartmann)
O 56.5: Talk
Wednesday, March 16, 2011, 16:00–16:15, GER 38
Pattern transfer on large samples using a sub-aperture reactive ion beam — •André Miessler, Agnes Mill, Jürgen W. Gerlach, and Thomas Arnold — Leibniz-Institut für Oberflächenmodifizierung (IOM), Permoserstrasse 15, D-04318 Leipzig, Germany
In comparison to sole Ar ion beam sputtering Reactive Ion Beam Etching (RIBE) reveals the main advantage of increasing the selectivity for different kind of materials due to chemical contributions during the material removal. Therefore RIBE is qualified to be an excellent candidate for pattern transfer applications. The goal of the present study is to apply a sub-aperture reactive ion beam for pattern transfer on large fused silica samples. Concerning this matter, the etching behavior in the ion beam periphery plays a decisive role.
Using CF4 as reactive gas, XPS measurements of the modified surface exposes impurities like Ni, Fe and Cr, which belongs to chemically eroded material of the plasma pot as well as an accumulation of carbon (up to 40 atomic percent) in the beam periphery, respectively. The substitution of CF4 by NF3 as reactive gas reveals a lot of benefits: more stable ion beam conditions in combination with a reduction of the beam size down to a diameter of 5 mm and a reduced amount of the Ni, Fe and Cr contaminations. However, a layer formation of silicon nitride handicaps the chemical contribution of the etching process. These negative side effects influence the transfer of trench structures on quartz by changing the selectivity due to altered chemical reaction of the modified resist layer. Concerning this we investigate the pattern transfer on large fused silica plates using NF3-sub-aperture RIBE.