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O: Fachverband Oberflächenphysik

O 58: [DS] Plasmonics and Nanophotonics (jointly with HL and O)

O 58.3: Vortrag

Mittwoch, 16. März 2011, 17:45–18:00, GER 38

Two state lasing from a quantum dot laser — •Diana Khabipova, Kathy Lüdge, Niels Majer, and Eckehard Schöll — Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

We investigate the emission properties of a quantum dot (QD) laser with two confined electron and two hole levels, respectively. Our microscopically based rate equation model for quantum dot lasers [1] is extended by including the first excited state of the QDs as a second lasing state besides the ground state. The model treats separately the dynamics of QD electrons and holes, photon densities of the ground and excited state lasing, respectively, and the electron and hole densities in the 2D wetting layer as carrier reservoir. The carrier-carrier scattering rates include the direct capture from the wetting layer into the ground and excited state as well as relaxation processes from excited to ground state. The influence of the energy differences between the excited state, ground state, and wetting layer on the turn-on dynamics is investigated. We analyse also the effect of the excited state upon the relaxation oscillations, their turn-on delay and damping rate. Furthermore we study the excited state dynamics under thermal heating conditions and for different device dimensions.

[1] K. Lüdge, R. Aust, G. Fiol, M. Stubenrauch, D. Arsenijevic, D. Bimberg, and E. Schöll, IEEE J.Quantum Electron. 46, 12, 1755 (2010).