Dresden 2011 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 60: Poster Session IV (Solid/liquid interfaces; Semiconductors; Oxides and insulators; Graphene; Plasmonics and nanooptics; Electronic Structure; Surface chemical reactions; Heterogeneous catalysis)
O 60.115: Poster
Mittwoch, 16. März 2011, 17:30–21:00, P4
First-Principles Calculations of Hydrogen Generation Due to Water Splitting on Polar GaN Surface — •Po-Tuan Chen — Physics Department, Osnabrueck, Germany
We present the chemical reactions leading to hydrogen gas generation via water splitting on polar GaN surfaces, which can be a significant source of renewable energy. To build an understanding at the atomic level of the activations afforded by the GaN (0001) and (000-1) surfaces, we determine the reaction mechanism of hydrogen generation on the polar faces using density functional theory calculations. The calculation results show that the first H splitting from water can occur with ground-state electronic structures; the barriers of H2O splitting are 0.10 and 0.34 eV on the Ga-face and the N-face, respectively. However, the second H splitting requires huge energies of 1.42 and 1.73 eV, respectively, on the Ga-face and the N-face. Although the polar GaN surface can catalyze the first hydrogen splitting from water, we suggest that photoexcitation should be necessary for the second splitting.