Dresden 2011 – scientific programme

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O: Fachverband Oberflächenphysik

O 60: Poster Session IV (Solid/liquid interfaces; Semiconductors; Oxides and insulators; Graphene; Plasmonics and nanooptics; Electronic Structure; Surface chemical reactions; Heterogeneous catalysis)

O 60.20: Poster

Wednesday, March 16, 2011, 17:30–21:00, P4

The growth of ultra thin Praseodymia oxide films on boron-passivated Si(111) surfaces — •Henrik Wilkens, Alexander Knobeler, Sebastian Gevers, Nina Jeppesen, Daniel Bruns, Thomas Weisemoeller, and Joachim Wollschläger — FB Physik, Universität Osnabrück, Barbarastr. 7, 49069 Osnabrück, Germany

Silicon on insulator (SOI) CMOS technology already have an enormous commercial impact with Si dioxide as insulating material. Alternative insulating materials are in the focus of investigation to integrate semiconductors for system on chip (SOC) solutions that cannot be built on Si alone.
Due to its good insulations characteristics and a high dielectric constant, praseodymium oxide is an interesting candidate for such applications. To prevent the formation of silicate at the substrate-oxide interface it is essential to use passivated silicon substrates. In this work the influence of boron-passivation is investigated. Prior to praseodymium oxide evaporation by molecular beam epitaxy the Si substrate surface was passivated by boron via evaporation of boric acid and subsequent annealing of the substrate to 900^∘C. In situ Spot Profile Analysis Low Energy Electron Diffraction (SPA-LEED) and Auger Electron Spectroscopy (AES) were used to characterize the surface structure and morphology. Additional Ex-situ X-Ray Reflectivity (XRR) and X-Ray Diffraction (XRD) analyses were performed. The results show that at a substrate temperature of 500^∘C a single crystalline oxide film is formed.