Dresden 2011 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 60: Poster Session IV (Solid/liquid interfaces; Semiconductors; Oxides and insulators; Graphene; Plasmonics and nanooptics; Electronic Structure; Surface chemical reactions; Heterogeneous catalysis)

O 60.51: Poster

Mittwoch, 16. März 2011, 17:30–21:00, P4

Production Nitrogen Doped Graphene on Ni(111) Surface — •Wei Zhao, Junfa Zhu, Oliver Höfert, Karin Gotterbarm, Christian Papp, and Hans-Peter Steinrück — Lehrstuhl für Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058 Erlangen

Graphene, the 2D-carbon network is considered as one of the most promising candidates for the post-silicon semiconductor materials.[1] Referring to the classic semiconductor research route, introducing hetero-atoms to the graphene sheet will modify the electronic properties and make it possible to use it in realistic applications. Therefore, nitrogen doped graphene sheets on a Ni(111) surface were prepared by low energy nitrogen sputtering of graphene below 150 K and also directly by exposure of the Ni(111) surface to pyridine at elevated temperatures. Applying in-situ high resolution X-ray photoelectron spectroscopy, the structure and thermal stability of N-doped graphene sheets on Ni(111) were investigated. It is found that at 900 K the graphitic-N and the pyridinic-N dominate the nitrogen doped parts in the sputtered graphene layers, of which the nitrogen concentration is ∼ 1.5%. For the graphene sheet prepared from exposure to pyridine pyridinic-N is the main structure element found. Here we achieve a doping of with ∼ 1.7 % of nitrogen. Moreover a closer examination of the thermal stability of these layers was conducted.

Support is acknowledged from the BMBF (05 ES3XBA/5) and the Cluster of Excellence "Engineering of Advanced Materials". [1]Novoselov, K.S., et al. Science, 2004. 306(5696).