Dresden 2011 – scientific programme
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O: Fachverband Oberflächenphysik
O 62: [DS] Organic Electronics and Photovoltaics I (jointly with CPP, HL, and O)
O 62.2: Talk
Thursday, March 17, 2011, 10:30–10:45, GER 38
Investigation of the origin of the memory effect in devices based on C60 — •Philipp Sebastian, Alexander Zakhidov, Björn Lüssem, and Karl Leo — Institut für Angewandte Photophysik, George-Bähr-Straße 1, 01069 Dresden, Germany
Besides their application in organic solar cells and organic light emitting diodes, organic semiconductors also show much potential in the field of flexible and lightweight electronics, such as organic memory. In particular, the development of organic memory devices has turned out to be challenging. So far, many different approaches for organic memory devices have been reported in literature [1].
In this contribution, we report on an organic memory device comprising SiO2 layer on top of a indium tin (ITO) ground contact, followed by electron accepting C60 layer, a n-doped (Cs) 4,7-diphenyl-1,10-phenanthroline (BPhen) layer and an Al top electrode. IV measurements reveal a reproducible hysteresis of our devices with a maximum ON-OFF ratio of about one order of magnitude. The memory devices also demonstrate a remarkable switching cycle durability of more than 104 successfully applied write read erase read cycles, whereas the ON-OFF ratio remains constant at about 10. Retention times of several weeks underline a reasonable non-volatility. Further, the memory mechanism has been investigated by impedance spectroscopy. A hysteresis in capacitance-voltage measurements expresses the accumulation of electrons in the C60 and at the interface to the SiO2 layer.
[1] J. Scott, L. Bozano, Advanced Materials 19, 1452 (2007)