Dresden 2011 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 77: Graphene V

O 77.5: Vortrag

Donnerstag, 17. März 2011, 16:00–16:15, WIL B321

Doping of epitaxial graphene on Ir(111) — •Iva Šrut¹, Marin Petrović¹, Petar Pervan¹, Milorad Milun¹, Daniel Förster², Carsten Busse², Thomas Michely², and Marko Kralj¹ — ¹Institut za fiziku, Bijenička 46, 10000 Zagreb, Croatia — ²II. Physikalisches Institut, Zülpicher Str. 77, 50937 Köln, Germany

Graphene's remarkable electronic properties give rise to great expectations of this new material for future electronic devices and spintronic applications. For such purposes a manipulation of its electronic band structure is desired. We have shown that it is possible to engineer the electronic structure of graphene by fine-tuning the Dirac cone of the epitaxial graphene on Ir(111). We had intercalated several different materials, which led to the n-type doping of graphene: Cs, Li, Eu, and their combination. Doping with a specific material leads to different fine effects, such as: (a) gradual or stepwise doping, (b) apparent gap opening at the Dirac point and (c) group velocity changes. We study these effects through direct comparison of the band structure measured by angle resolved photoemission spectroscopy (ARPES).