Dresden 2011 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 80: Epitaxy and growth: Metals and semiconductors I

O 80.3: Vortrag

Donnerstag, 17. März 2011, 15:30–15:45, WIL C307

Growth of atomically flat Zn films on ZnO(0001) surface — •Hao Zheng, Natalia Schneider, and Richard Berndt — Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germany

Transition metal/oxide heterostructures have been investigated as model catalyst. Owing to the largely different surface energies of these materials, three-dimensional metal islands usually form on oxide surfaces. On semiconductors, flat metal films are obtained by a two-step growth method involving low temperature deposition followed by room temperature annealing. Up to now, there are no reports of similar results on oxide surfaces. Here we present scanning tunnelling microscopy data from atomically flat Zn films on ZnO(0001) obtained by a simple one step growth. Subtle variations of the apparent height of the Zn surface are observed, which resemble structures observed from the ZnO(0001) surface underneath. This observation is discussed in terms of tunnelling to quantum well resonances of the Zn films. Support by the DFG via SFB 855 is acknowledged.