Dresden 2011 – scientific programme

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O: Fachverband Oberflächenphysik

O 80: Epitaxy and growth: Metals and semiconductors I

O 80.7: Talk

Thursday, March 17, 2011, 16:30–16:45, WIL C307

(contribution withdrawn) Epitaxial growth of Group IV materials by Chemical Vapor Deposition for Germanium Metal Oxide Semiconductor devices — •Benjamin Vincent, Roger Loo, and Matty Caymax — imec, Kapeldreef 75, B-3001 Leuven, Belgium

Over the past 5-10 years, germanium has attracted a lot of interest to replace Silicon as a high carrier mobility material in future p-Metal Oxide Semiconductors transistors. This paper reviews developments of epitaxial Group IV materials (silicon, germanium, tin and alloys) by means of Reduced Pressure Chemical Vapor Deposition for use as Channel, Gate stack and Source/Drain in high performance Germanium transistors. We will first describe Germanium growth on standard Silicon wafers. Selective epitaxial growth within Shallow Trench Isolation structures allows seamless integration of Germanium channels in Si platform with a significant defect reduction down to levels required for state-of-the-art VLSI technology. Next we will focus on the most successful passivation approach for Germanium MOS interfaces by means of ultrathin epitaxial Si capping layers. This moves the problem of gate stack formation from a germanium surface to a silicon surface. We will discuss novel extremely low temperature CVD processes involving innovative precursors, and impacts of point defects, strain relaxation and Silicon-Germanium intermixing on Germanium device performance. Finally, the implementation of Germanium-Tin alloys in embedded Source/Drain regions in Germanium transistors will be proposed as an innovative architecture to implement strain in Germanium channels.