O 80: Epitaxy and growth: Metals and semiconductors I
Donnerstag, 17. März 2011, 15:00–17:00, WIL C307
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15:00 |
O 80.1 |
Strain aspects of the atomic structure of the InAs wetting layer grown on GaAs(001)-c(4×4) — •Christopher Prohl, Jan Grabowski, Britta Höpfner, Mario Dähne, and Holger Eisele
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15:15 |
O 80.2 |
Anion-enhanced self-diffusion on Au(100) — •Mostafa Mesgar, Payam Kaghazchi, and Timo Jacob
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15:30 |
O 80.3 |
Growth of atomically flat Zn films on ZnO(0001) surface — •Hao Zheng, Natalia Schneider, and Richard Berndt
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15:45 |
O 80.4 |
The Interaction of Copper with a Rhenium(1010) Surface — •Daniel Przyrembel and Klaus Christmann
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16:00 |
O 80.5 |
Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001) — •Lena Neumann, Jürgen Gerlach, Thomas Höche, and Bernd Rauschenbach
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16:15 |
O 80.6 |
AES/LEED/I(V) LEED investigation of ultrathin Pb and In layers deposited on Ni(001) and Ni(111) faces — •Katarzyna Miśków and Aleksander Krupski
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16:30 |
O 80.7 |
(contribution withdrawn) Epitaxial growth of Group IV materials by Chemical Vapor Deposition for Germanium Metal Oxide Semiconductor devices — •Benjamin Vincent, Roger Loo, and Matty Caymax
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16:45 |
O 80.8 |
Ab-initio study on the temperature dependence of adsorbate-induced segregation in C/Pt25Rh75(100) — •Tobias C. Kerscher and Stefan Müller
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