Dresden 2011 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 15: Poster 1: Quanteninformation, Quanteneffekte, Laserentwicklung, Laseranwendungen, Ultrakurze Pulse, Photonik
Q 15.27: Poster
Monday, March 14, 2011, 16:30–19:30, P1
Development of low-loss silicon rib waveguides with 4 microns height — •Harald Richter1, René Eisermann1, Mirko Fraschke1, Lars Zimmermann1,2, Katrin Schulz1, Marco Lisker1, Wolfgang Höppner1, Jürgen Drews1, Georg Winzer2, and Bernd Tillack1,2 — 1IHP Frankfurt, Im Technologiepark 25, 15236 Frankfurt (Oder) — 2Technische Universität Berlin, HFT 4, Einsteinufer 25
There has been an increased interest in silicon as a material for use in integrated optoelectronics. Silicon-on-insulator (SOI) waveguides are very promising for realization of photonic integrated circuits. The transport of light by a waveguide is one main reason for light intensity loss. The minimization of propagation loss is the main goal in waveguide fabrication process development. Silicon roughness, critical dimension stability and side wall slope angles determine the silicon waveguide quality essentially. The present work is focused on the development of a manufacturing process for silicon rib waveguides with 4 microns height. Different hard mask layer stacks for the deep silicon etch process were tested and optimized. Experiments have shown the mask opening step is significant for high-quality silicon waveguides. For the following silicon dry etch process an HBr/SF6 chemistry was chosen for fabrication of rib waveguide with sidewall slope angles between 89° and 90° and minimal sidewall roughness. Propagation loss values less than 0.3 dB/cm verify the technological manufacturing process quality.