Dresden 2011 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 42: Laserentwicklung: Festkörperlaser 3
Q 42.3: Vortrag
Mittwoch, 16. März 2011, 17:00–17:15, SCH 251
Development of an all semiconductor laser system for ultrashort pulse generation — •Jan C. Balzer1, Tobias Schlauch1, Andreas Klehr2, Götz Erbert2, Günther Tränkle2, and Martin R. Hofmann1 — 1Chair for Photonics and Terahertz Technology, Building ID 04/327, D-44780 Bochum, Germany — 2Ferdinand Braun Institute, Gustav-Kirchhoff-Str. 4, D-12489 Berlin, Germany
Laser diodes are attractive sources for the generation of ultrashort pulses. These systems are particularly interesting as an alternative to conventional femtosecond lasers like Ti:sapphire lasers, which are rather complex and expensive. We present a compact all semiconductor laser system for femtosecond pulse generation. A two section electrically driven edge emitting dual quantum well mode-locked laser diode is used in an external cavity. With intracavity dispersion control the spectral bandwidth of our laser could be significantly increased. Due to the mainly quadratic spectral phase of the generated pulses an external pulse compressor allows us a reduction of the pulse duration down to 200 fs by compensating the linear chirp. In combination with a tapered amplifier a peak power in the kW range was realized. With these specifications our system is a cost efficient and compact alternative to commercial laser systems for ultrashort pulse generation. It has already been demonstrated that our system is capable to replace a commercial Ti:sapphire laser system in order to drive a terahertz time-domain spectrometer.