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TT: Fachverband Tiefe Temperaturen

TT 33: CE: Metal-Insulator Transition 1

TT 33.1: Vortrag

Mittwoch, 16. März 2011, 10:30–10:45, HSZ 105

A Microscopic View on the Mott transition in Cr-doped V₂O₃ — •Nicolaus Parragh¹, Stefano Lupi², Leonetta Baldassare³, Daniele Nicoletti⁴, Marino Marsi⁵, Philipp Hansmann¹, Alessandro Toschi¹, Tanusri Saha-Dasgupta⁶, Ole-Krogh Andersen⁷, Giorgio Sangiovanni¹, and Karsten Held¹ — ¹Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria — ²CNR-IOM and Universita’ di Roma "La Sapienza", Italy — ³Sincrotrone Trieste, Italy — ⁴Universita’ di Roma "La Sapienza" Italy — ⁵Laboratoire de Physique des Solides, CNRS-UMR 8502, Orsay, France — ⁶S.N.Bose Center for Basic Sciences, Kolkata, India — ⁷Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany

The metal-insulator transition in Chromium-doped Vanadium Sesquioxide has recieved much attention since its discovery in 1969. After several attempts for describing it in the framework of single-band Hubbard models some key experiments reveiled the intimate multi-band nature of this material. Here I will present the results of a recent experiment combining Infrared (IR), Scanning Photoemission Microscopy (SPEM) and X-ray Diffraction (XRD) and local density approximation + dynamical mean field theory (LDA+DMFT) calculations showing for the first time that microscopic islands characterized by bad metallic behaviour form close to the first-order transition. The bad metallicity is only partially reduced by applying pressure, pointing to a non-trivial interplay between the orbital degrees of freedom [1].
Nature Communications 1, 105 (2010)