Dresden 2011 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 38: Poster Session Transport

TT 38.37: Poster

Wednesday, March 16, 2011, 14:00–18:00, P3

A route to strong p-doping of epitaxial graphene on SiC — •Udo Schwingenschlögl and Yingchun Cheng — PSE Division, KAUST, Thuwal 23955-6900, Kingdom of Saudi Arabia

The effects of Au intercalation on the electronic properties of epitaxial graphene grown on SiC0001 substrates are studied using first principles calculations. A graphene monolayer on SiC0001 restores the shape of the pristine graphene dispersion, where doping levels between strongly n-doped and weakly p-doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphene grown on SiC0001 makes it possible to achieve a strongly p-doped graphene state, where the p-doping level can be controlled by means of the Au coverage [1].
Appl. Phys. Lett. 97, 193304 (2010)