Dresden 2011 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 40: Topological Insulators (jointly with HL, MA)
TT 40.2: Vortrag
Mittwoch, 16. März 2011, 17:00–17:15, HSZ 04
Thermal and structural stability of the topological state on Bi2Se3 — •Dandan Guan1,2, M. Bianchi1, R. C. Hatch1, S. Bao2, J. Mi3, B. B. Iversen3, and Ph. Hofmann1 — 1Department of Physics and Astronomy, Aarhus University, Denmark — 2Department of Physics, Zhejiang University, Hangzhou, China — 3Department of Chemistry, Aarhus University, Denmark
Topological insulator surfaces have recently attracted considerable attention, not least because they are predicted to play host to many novel physical phenomena. The topological states are also thought to have possible applications in (spin) transport, since they are not only protected from back-scattering, their very existence can be viewed as a bulk property. This implies that minor surface modifications can change the detailed dispersion of the topological state, but not remove it altogether.
We investigate the thermal and structural stability of the topological state on Bi2Se3 using angle resolved photoemission spectroscopy. The electron-phonon coupling strength is obtained through measurements of the temperature-dependent self-energy and the resulting λ value is compared to the bulk and to other surface-localized states. The structural stability is tested by surface modifications through noble gas ion bombardment.