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TT: Fachverband Tiefe Temperaturen

TT 43: TR: Nanoelectronics II - Spintronics and Magnetotransport 2 (jointly with HL and MA)

TT 43.5: Vortrag

Mittwoch, 16. März 2011, 20:00–20:15, HSZ 03

Design of nanostructures with maximal magnetoresistance using genetic algorithms — •Daungruthai Jarukanont — University of Kassel, Kassel, Germany

We present a theoretical study of spin-dependent electron transport through organic spin-valves, modeled by an organic molecule sandwich between two ferromagnetic electrodes. The calculations of spin-currents are based on the non-equilibrium Green's function and the Keldysh formalism at low bias. The electrodes are described by tight binding model of 3D semi-infinite leads, while molecules are method independent. We examine the influence of molecular details to spin-currents, and magnetoresistance(MR). The genetic algorithm is perform as an optimization to find the electronics structure of molecules with high values of MR. Example of molecular choices such as alkanethiols, 1,4-benzenedithiol with different molecule-electrode interactions are analyzed.