Dresden 2011 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 44: Poster Session Correlated Electrons
TT 44.37: Poster
Thursday, March 17, 2011, 10:00–13:00, P1
Exploring the doping dependence of the Mott transition on X-ray irradiated crystals of κ-(ET)2Cu[N(CN)2]Cl — •Sebastian Köhler1, Ulrich Tutsch1, Ammar Naji1, Takahiko Sasaki2, and Michael Lang1 — 1Physikalisches Institut, Goethe-Universität Frankfurt (M), SFB/TRR49, D-60438 Frankfurt (M) — 2Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan
The quasi two-dimensional organic charge-transfer salt κ-(ET)2Cu[N(CN)2]Cl exhibits a rich pressure vs. temperature phase diagram, including Mott-insulating and metallic phases separated by a first order transition line. By applying moderate pressures of ∼ 30 MPa (300 bar), the ratio of the kinetic energy to the onsite Coulomb repulsion t/U can be changed sufficiently to cross this phase transition line. Our objective is to study the effect of carrier doping and the accompanying changes of the first-order transition line and its second-order critical endpoint. We used X-ray irradiation [1] to introduce charge carriers into the material, doping it away from half filling. We will present resistivity data for the temperature range 5K < T < 60K and for pressures up to 50 MPa for κ-(ET)2Cu[N(CN)2]Cl crystals at various doping levels and discuss the accompanied changes in the p-T-phase diagram.
T.Sasaki et al., Phys. Soc. Jpn. 76, 123701 (2007)