Dresden 2011 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 47: TR: Nanoelectronics I - Quantum Dots, Wires, Point Contacts 1

TT 47.1: Talk

Thursday, March 17, 2011, 10:30–10:45, HSZ 304

Universal relaxation resistance in the interacting resonant level model — •Oleksiy Kashuba, Herbert Schoeller, and Janine Splettstoesser — Institute for Theory of Statistical Physics, RWTH Aachen, 52056 Aachen, Germany

We calculated relaxation resistance, capacitance and relaxation time for the quantum dot interacting with a single-channel spin-polarised contact using the interacting resonant level model[1]. Extending the real-time renormalisation group method[2] for the case of adiabatic time depending parameters we confirmed the prediction of the universal relaxation resistance which was made for the non-interacting system[3]. We also expanded our model allowing adiabatic time dependence in interaction strength as well as in the escape rate and the level position. We found the corrections to the transport coefficients and showed that the relaxation time is less sensitive to the adiabatic time dependence then the resistance and capacitance, and the calculation of the correction to the relaxation time cannot be made in the frame of perturbation expansion with renormalised parameters requiring renorm-group approach.
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M.Buttiker, H.Thomas, and A.Pretre, Mesoscopic capacitors, Phys. Lett. A 180, 364 (1993).